FDN339AN

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Continuous Drain Current (ID) :

3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Power Dissipation :

500mW

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

20V

Terminal Position :

Dual

Radiation Hardening :

No

REACH SVHC :

No SVHC

Threshold Voltage :

850mV

Termination :

SMD/SMT

Factory Lead Time :

10 Weeks

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Element Configuration :

Single

Weight :

30mg

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Transistor Application :

SWITCHING

Series :

PowerTrench®

Current Rating :

3A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Rise Time :

10ns

Number of Channels :

1

Number of Elements :

1

Lead Free :

Lead Free

Fall Time (Typ) :

10 ns

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Height :

1.22mm

Mount :

Surface Mount

ECCN Code :

EAR99

Published :

1999

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

3A

Mounting Type :

Surface Mount

Width :

1.4mm

Vgs (Max) :

±8V

Nominal Vgs :

850 mV

Turn On Delay Time :

8 ns

Rds On (Max) @ Id, Vgs :

35m Ω @ 3A, 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Resistance :

35mOhm

Drain to Source Breakdown Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 10V

Dual Supply Voltage :

20V

Gate to Source Voltage (Vgs) :

8V

Length :

2.92mm

Power Dissipation-Max :

500mW Ta

Turn-Off Delay Time :

18 ns