FDN339AN

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1999

Termination :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

3A Ta

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

35m Ω @ 3A, 4.5V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

8V

Nominal Vgs :

850 mV

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Resistance :

35mOhm

JESD-609 Code :

e3

Vgs (Max) :

±8V

Current Rating :

3A

Fall Time (Typ) :

10 ns

Transistor Application :

SWITCHING

Mount :

Surface Mount

ECCN Code :

EAR99

Turn On Delay Time :

8 ns

Voltage - Rated DC :

20V

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Series :

PowerTrench®

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Height :

1.22mm

Terminal Form :

Gull wing

Radiation Hardening :

No

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Power Dissipation :

500mW

Number of Channels :

1

Weight :

30mg

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 10V

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Threshold Voltage :

850mV

Drain Current-Max (Abs) (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Continuous Drain Current (ID) :

3A

Rise Time :

10ns

Dual Supply Voltage :

20V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Length :

2.92mm

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

500mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Width :

1.4mm

Turn-Off Delay Time :

18 ns

Element Configuration :

Single

Lead Free :

Lead Free

Number of Terminations :

3

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain to Source Breakdown Voltage :

20V