FDN339AN
- Mfr.Part #
- FDN339AN
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 5,246
- In Stock :
- 5,246
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Termination :
- SMD/SMT
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 10 ns
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Published :
- 1999
- Drain to Source Breakdown Voltage :
- 20V
- Voltage - Rated DC :
- 20V
- Factory Lead Time :
- 10 Weeks
- Turn-Off Delay Time :
- 18 ns
- Width :
- 1.4mm
- Drain Current-Max (Abs) (ID) :
- 3A
- Dual Supply Voltage :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Max Junction Temperature (Tj) :
- 150°C
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 3A
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Gate to Source Voltage (Vgs) :
- 8V
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 500mW Ta
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Rise Time :
- 10ns
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 3A, 4.5V
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Power Dissipation :
- 500mW
- Nominal Vgs :
- 850 mV
- Current Rating :
- 3A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vgs (Max) :
- ±8V
- Threshold Voltage :
- 850mV
- Weight :
- 30mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 10V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Height :
- 1.22mm
- Length :
- 2.92mm
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Turn On Delay Time :
- 8 ns
- Lead Free :
- Lead Free
- Resistance :
- 35mOhm
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Datasheets
- FDN339AN
FDN339AN Documents

N-Channel Tape & Reel (TR) 35m Ω @ 3A, 4.5V ±8V 700pF @ 10V 10nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN339AN Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain a low gate charge for superior switching performance.
FDN339AN Features
3 A, 20 V. RDS(ON) = 0.035 ? @ VGS = 4.5 V
RDS(ON) = 0.050 ? @ VGS = 2.5 V.
Low gate charge (7nC typical).
High-performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
FDN339AN Applications
DC/DC converter
Load switch
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