FDN338P

Manufacturer :

UTD Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-20V

Power Dissipation :

500mW

ECCN Code :

EAR99

Continuous Drain Current (ID) :

1.6A

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 4.5V

Power Dissipation-Max :

500mW Ta

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Fall Time (Typ) :

11 ns

Max Junction Temperature (Tj) :

150°C

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

451pF @ 10V

Rds On (Max) @ Id, Vgs :

115m Ω @ 1.6A, 4.5V

Weight :

30mg

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Published :

2001

Pbfree Code :

yes

Mount :

Surface Mount

Turn On Delay Time :

10 ns

Voltage - Rated DC :

-20V

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Width :

3.05mm

Lead Free :

Lead Free

Rise Time :

11ns

Transistor Element Material :

SILICON

FET Type :

P-Channel

Factory Lead Time :

10 Weeks

Series :

PowerTrench®

Terminal Form :

Gull wing

Number of Elements :

1

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Nominal Vgs :

-800 mV

Threshold Voltage :

-800mV

Number of Pins :

3

REACH SVHC :

No SVHC

Element Configuration :

Single

Resistance :

115mOhm

Transistor Application :

SWITCHING

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Contact Plating :

Tin

Current Rating :

-1.6A

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

8V

Turn-Off Delay Time :

16 ns

Height :

1.22mm