FDMD8580

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Mfr.Part #
FDMD8580
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET 80V 16A POWER 5X6
Stock
28,068
In Stock :
28,068

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Rds On (Max) @ Id, Vgs :
4.6m Ω @ 16A, 10V
Mount :
Surface Mount
Max Power Dissipation :
2.3W
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
Standard
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Weight :
94.85095mg
FET Type :
2 N-Channel (Dual)
Packaging :
Tape and Reel (TR)
Number of Pins :
8
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Reach Compliance Code :
not_compliant
Element Configuration :
Dual
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Factory Lead Time :
12 Weeks
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
8-PowerWDFN
Series :
PowerTrench®
Input Capacitance (Ciss) (Max) @ Vds :
5875pF @ 40V
Current - Continuous Drain (Id) @ 25°C :
16A Ta 82A Tc
Continuous Drain Current (ID) :
82A
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
80V
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDMD8580 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-PowerWDFN, FDMD8580 pinout, FDMD8580 datasheet PDF, FDMD8580 amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDMD8580 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMD8580


FDMD8580 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDMD8580      Description

This device includes two 80V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on) / Qg FOM silicon.

 

FDMD8580       Features

 

Q1: N-Channel

Max rDS(on) = 4.6 m|? at VGS = 10 V, ID = 16 A

Max rDS(on) = 6.0 m|? at VGS = 8 V, ID = 14 A

Q2: N-Channel

Max rDS(on) = 4.6 m|? at VGS = 10 V, ID = 16 A

Max rDS(on) = 6.0 m|? at VGS = 8 V, ID = 14 A

Ideal for Flexible Layout in Primary Side of Bridge Topology

100% UIL Tested

Kelvin High Side MOSFET Drive Pin-out Capability

RoHS Compliant


FDMD8580       Applications


This product is general usage and suitable for many different applications.

 






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