FDMD8280
- Mfr.Part #
- FDMD8280
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 12-PowerWDFN
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 20,796
- In Stock :
- 20,796
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3050pF @ 40V
- Turn-Off Delay Time :
- 26 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Dual
- Terminal Form :
- NO LEAD
- Rds On (Max) @ Id, Vgs :
- 8.2m Ω @ 11A, 10V
- Rise Time :
- 12ns
- Number of Elements :
- 2
- Weight :
- 82.3188mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Fall Time (Typ) :
- 8.9 ns
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 15 ns
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 80V
- Case Connection :
- DRAIN SOURCE
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 11A
- Package / Case :
- 12-PowerWDFN
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- FET Feature :
- Standard
- Number of Channels :
- 2
- Drain to Source Voltage (Vdss) :
- 80V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 12
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Factory Lead Time :
- 12 Weeks
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Number of Pins :
- 12
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDMD8280
FDMD8280 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMD8280 Description
This device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on) / Qg FOM silicon.
FDMD8280 Features
Max rDS(on) = 8.2 m|? at VGS = 10 V, ID = 11 A
Max rDS(on) = 11 m|? at VGS = 8 V, ID = 9.5 A
Ideal for flexible layout in primary side of bridge topology
Termination is Lead-free and RoHS Compliant
100% UIL tested
Kelvin High Side MOSFET drive pin-out capability
FDMD8280 Applications
This product is general usage and suitable for many different applications.
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