FDMD8280

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

80V

Number of Channels :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN SOURCE

Fall Time (Typ) :

8.9 ns

JESD-609 Code :

e3

Turn-Off Delay Time :

26 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

80V

Transistor Element Material :

SILICON

Element Configuration :

Dual

Max Power Dissipation :

1W

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 11A, 10V

FET Feature :

Standard

Transistor Application :

SWITCHING

Series :

PowerTrench®

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Rise Time :

12ns

Peak Reflow Temperature (Cel) :

260

Terminal Form :

NO LEAD

Pbfree Code :

yes

Turn On Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

3050pF @ 40V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

11A

Package / Case :

12-PowerWDFN

Weight :

82.3188mg

Number of Terminations :

12

Number of Pins :

12

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

ECCN Code :

EAR99