FDMD8280

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Reach Compliance Code :

not_compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

12ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

2 N-Channel (Dual)

Number of Terminations :

12

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Turn-Off Delay Time :

26 ns

Max Power Dissipation :

1W

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

8.9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Series :

PowerTrench®

Terminal Form :

NO LEAD

Number of Elements :

2

Turn On Delay Time :

15 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

80V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 11A, 10V

RoHS Status :

ROHS3 Compliant

Package / Case :

12-PowerWDFN

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Case Connection :

DRAIN SOURCE

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Weight :

82.3188mg

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

3050pF @ 40V

Element Configuration :

Dual

Number of Pins :

12

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Continuous Drain Current (ID) :

11A

FET Feature :

Standard

Drain to Source Breakdown Voltage :

80V