FDMD8260L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

12-PowerWDFN

Max Power Dissipation :

1W

Drain to Source Voltage (Vdss) :

60V

JESD-609 Code :

e3

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

64A

Max Junction Temperature (Tj) :

150°C

Series :

PowerTrench®

Reach Compliance Code :

not_compliant

Element Configuration :

Dual

Turn-Off Delay Time :

47 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 15A, 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Height :

800μm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

5245pF @ 30V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

15A

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

12 Weeks

Number of Pins :

12

Weight :

82.3188mg

Turn On Delay Time :

12 ns

Number of Channels :

2

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Pbfree Code :

yes

Power Dissipation :

1W