FDMD8260L
- Mfr.Part #
- FDMD8260L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 12-PowerWDFN
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 123,863
- In Stock :
- 123,863
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mount :
- Surface Mount
- Series :
- PowerTrench®
- Max Junction Temperature (Tj) :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 5245pF @ 30V
- FET Feature :
- Standard
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 12
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 12 ns
- Factory Lead Time :
- 12 Weeks
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Package / Case :
- 12-PowerWDFN
- Continuous Drain Current (ID) :
- 15A
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Dual
- Max Power Dissipation :
- 1W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- 260
- Number of Channels :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Turn-Off Delay Time :
- 47 ns
- Drain to Source Breakdown Voltage :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1W
- FET Type :
- 2 N-Channel (Dual)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 800μm
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 15A, 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Weight :
- 82.3188mg
- Drain Current-Max (Abs) (ID) :
- 64A
- Datasheets
- FDMD8260L
FDMD8260L Documents
FDMD8260L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMD8260L Description
The device includes two 60V N-channel MOSFET in a dual power supply (3.3 mm x 5 mm) package. HS source and LS drain internal connection for half / full bridge, low source inductance package, low RDS (on) ratio / QG and FOM silicon.
FDMD8260L Features
Max rDS(on) = 5.8 m|? at VGS = 10 V, ID = 15 A
Max rDS(on) = 8.7 m|? at VGS = 4.5 V, ID = 12 A
Ideal for Flexible Layout in Primary Side of Bridge Topology
100% UIL Tested
Kelvin High Side MOSFET Drive Pin-out Capability
Termination is Lead-free and RoHS Compliant
FDMD8260L Applications
This product is general usage and suitable for many different applications.
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