FDMD8260L

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Mfr.Part #
FDMD8260L
Manufacturer
Fairchild Semiconductor
Package / Case
12-PowerWDFN
Datasheet
Download
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Stock
123,863
In Stock :
123,863

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Arrays
Weight :
82.3188mg
Series :
PowerTrench®
Vgs(th) (Max) @ Id :
3V @ 250µA
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Element Configuration :
Dual
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
1W
Number of Channels :
2
Number of Pins :
12
Max Power Dissipation :
1W
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
FET Feature :
Standard
Drain to Source Breakdown Voltage :
60V
FET Type :
2 N-Channel (Dual)
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
5245pF @ 30V
Turn On Delay Time :
12 ns
Turn-Off Delay Time :
47 ns
Continuous Drain Current (ID) :
15A
Drain to Source Voltage (Vdss) :
60V
Rds On (Max) @ Id, Vgs :
5.8m Ω @ 15A, 10V
Drain Current-Max (Abs) (ID) :
64A
Height :
800μm
Reach Compliance Code :
not_compliant
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
68nC @ 10V
Factory Lead Time :
12 Weeks
Max Junction Temperature (Tj) :
150°C
Mount :
Surface Mount
ECCN Code :
EAR99
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Package / Case :
12-PowerWDFN
Introducing Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDMD8260L from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:2, Number of Pins:12, Mounting Type:Surface Mount, Package / Case:12-PowerWDFN, FDMD8260L pinout, FDMD8260L datasheet PDF, FDMD8260L amp .Beyond Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDMD8260L ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.



FDMD8260L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDMD8260L      Description


  The device includes two 60V N-channel MOSFET in a dual power supply (3.3 mm x 5 mm) package. HS source and LS drain internal connection for half / full bridge, low source inductance package, low RDS (on) ratio / QG and FOM silicon.


FDMD8260L         Features

 

Max rDS(on) = 5.8 m|? at VGS = 10 V, ID = 15 A

Max rDS(on) = 8.7 m|? at VGS = 4.5 V, ID = 12 A

Ideal for Flexible Layout in Primary Side of Bridge Topology

100% UIL Tested

Kelvin High Side MOSFET Drive Pin-out Capability

Termination is Lead-free and RoHS Compliant


FDMD8260L              Applications


This product is general usage and suitable for many different applications.

 





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