FDMD82100L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.0195ohm

Weight :

82.3188mg

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1585pF @ 50V

Turn-Off Delay Time :

21 ns

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

7.9 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Rise Time :

2.8ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

PowerTrench®

Max Power Dissipation :

1W

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Element Configuration :

Dual

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Feedback Cap-Max (Crss) :

15 pF

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

7A

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

7A

Terminal Form :

NO LEAD

Number of Terminations :

12

Transistor Element Material :

SILICON

Package / Case :

12-PowerWDFN

Terminal Finish :

Tin (Sn)

Number of Pins :

12

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Number of Channels :

2

Number of Elements :

2

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 7A, 10V

Fall Time (Typ) :

2.9 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN SOURCE

Operating Temperature :

-55°C~150°C TJ