FDMD84100

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

980pF @ 50V

Terminal Form :

NO LEAD

Published :

2017

Reach Compliance Code :

not_compliant

Turn On Delay Time :

8.4 ns

Number of Elements :

2

Number of Terminations :

8

Package / Case :

8-PowerWDFN

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

21A

Fall Time (Typ) :

2.8 ns

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

20m Ω @ 7A, 10V

Height :

750μm

Length :

5.1mm

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

7A

Mounting Type :

Surface Mount

Number of Channels :

2

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Width :

3.4mm

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Series :

PowerTrench®

Mount :

Surface Mount

Max Power Dissipation :

23W

Current - Continuous Drain (Id) @ 25°C :

7A

Turn-Off Delay Time :

14 ns

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Weight :

153.4014mg

FET Feature :

Standard

Rise Time :

2.6ns

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual) Common Source

Power - Max :

2.1W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR