FDMD84100

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

2.8 ns

FET Type :

2 N-Channel (Dual) Common Source

Power - Max :

2.1W

Drain to Source Breakdown Voltage :

100V

Package / Case :

8-PowerWDFN

Length :

5.1mm

Number of Terminations :

8

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

20m Ω @ 7A, 10V

Published :

2017

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Dual

Current - Continuous Drain (Id) @ 25°C :

7A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Feature :

Standard

Width :

3.4mm

Input Capacitance (Ciss) (Max) @ Vds :

980pF @ 50V

Turn-Off Delay Time :

14 ns

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Weight :

153.4014mg

Turn On Delay Time :

8.4 ns

Continuous Drain Current (ID) :

21A

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Pbfree Code :

yes

Rise Time :

2.6ns

Series :

PowerTrench®

Operating Mode :

ENHANCEMENT MODE

Height :

750μm

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

23W

Drain Current-Max (Abs) (ID) :

7A

Number of Pins :

8

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ