FDMD8560L

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Mfr.Part #
FDMD8560L
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET 2N-CH 46V 22A POWER
Stock
2,932
In Stock :
2,932

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Package / Case :
8-PowerWDFN
FET Feature :
Standard
JESD-609 Code :
e3
Threshold Voltage :
1.6V
FET Type :
2 N-Channel (Half Bridge)
Gate to Source Voltage (Vgs) :
20V
Max Junction Temperature (Tj) :
150°C
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
12 Weeks
Turn-Off Delay Time :
57 ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
22A
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Weight :
94.85095mg
Number of Channels :
2
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Max Power Dissipation :
2.2W
Current - Continuous Drain (Id) @ 25°C :
22A 93A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
128nC @ 10V
Series :
PowerTrench®
Power Dissipation :
2.2W
Height :
800μm
Number of Pins :
8
Mount :
Surface Mount
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
3.2m Ω @ 22A, 10V
Reach Compliance Code :
not_compliant
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Turn On Delay Time :
20 ns
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
11130pF @ 30V
Drain to Source Breakdown Voltage :
60V
Datasheets
FDMD8560L
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDMD8560L from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerWDFN, Operating Temperature:-55°C~150°C TJ, Number of Channels:2, Number of Pins:8, Mounting Type:Surface Mount, FDMD8560L pinout, FDMD8560L datasheet PDF, FDMD8560L amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDMD8560L ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMD8560L


FDMD8560L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDMD8560L         Description


  The device includes two 60V N-channel MOSFET in a dual power supply (5 Mm X 6 Mm) package. HS source and LS drain internal connection for half / full bridge, low source inductor packaging, low RDS (on) / QG and FOM silicon.

 

FDMD8560L        Features

 

Q1: N-Channel

Max rDS(on) = 3.2 m|? at VGS = 10 V, ID = 22 A

Max rDS(on) = 5.4 m|? at VGS = 4.5 V, ID = 18 A

Q2: N-Channel

Max rDS(on) = 3.2 m|? at VGS = 10 V, ID = 22 A

Max rDS(on) = 5.4 m|? at VGS = 4.5 V, ID = 18 A

Ideal for Flexible Layout in Primary Side of Bridge Topology

100% UIL Tested

Kelvin High Side MOSFET Drive Pin-out Capability

RoHS Compliant


FDMD8560L        Applications


This product is general usage and suitable for many different applications.

 





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