FDD3510H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

80mOhm

FET Type :

N and P-Channel, Common Drain

JESD-609 Code :

e3

Turn-Off Delay Time :

25 ns

JESD-30 Code :

R-PSSO-G4

Pbfree Code :

yes

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4.3A 2.8A

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Power Dissipation :

3.1W

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 40V

Max Power Dissipation :

1.3W

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Weight :

260.37mg

Continuous Drain Current (ID) :

2.8A

Series :

PowerTrench®

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

4

Mounting Type :

Surface Mount

Fall Time (Typ) :

5 ns

Drain to Source Breakdown Voltage :

80V

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

4.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

80m Ω @ 4.3A, 10V

Rise Time :

3ns

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

37 mJ

Mount :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL