FDD3580

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Mfr.Part #
FDD3580
Manufacturer
Fairchild Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 80V 7.7A DPAK
Stock
8,500
In Stock :
8,500

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Unknown
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
1.76pF @ 40V
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
29m Ω @ 7.7A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Case Connection :
DRAIN
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Terminal Finish :
MATTE TIN
Current - Continuous Drain (Id) @ 25°C :
7.7A Ta
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~175°C TJ
Power Dissipation-Max :
3.8W Ta 42W Tc
Pulsed Drain Current-Max (IDM) :
50A
Qualification Status :
COMMERCIAL
Avalanche Energy Rating (Eas) :
245 mJ
Drain to Source Voltage (Vdss) :
80V
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
7.7A
Transistor Element Material :
SILICON
Number of Terminations :
2
DS Breakdown Voltage-Min :
80V
Terminal Position :
Single
Vgs (Max) :
±20V
Surface Mount :
yes
JESD-30 Code :
R-PSSO-G2
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
JESD-609 Code :
e3
Series :
PowerTrench®
Drain-source On Resistance-Max :
0.029Ohm
Datasheets
FDD3580
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDD3580 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, FDD3580 pinout, FDD3580 datasheet PDF, FDD3580 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDD3580 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDD3580


N-Channel Tape & Reel (TR) 29m Ω @ 7.7A, 10V ±20V 1.76pF @ 40V 49nC @ 10V 80V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD3580 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 245 mJ.The maximum input capacitance of this device is 1.76pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 7.7A.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 80V.The drain-to-source voltage (Vdss) of this transistor needs to be at 80V in order to operate.Using drive voltage (6V 10V), this device helps reduce its power consumption.

FDD3580 Features


the avalanche energy rating (Eas) is 245 mJ
based on its rated peak drain current 50A.
a 80V drain to source voltage (Vdss)


FDD3580 Applications


There are a lot of Rochester Electronics, LLC
FDD3580 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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