FDD3580
- Mfr.Part #
- FDD3580
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 7.7A DPAK
- Stock
- 8,500
- In Stock :
- 8,500
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.76pF @ 40V
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 7.7A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Ta
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 3.8W Ta 42W Tc
- Pulsed Drain Current-Max (IDM) :
- 50A
- Qualification Status :
- COMMERCIAL
- Avalanche Energy Rating (Eas) :
- 245 mJ
- Drain to Source Voltage (Vdss) :
- 80V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 7.7A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 80V
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- JESD-609 Code :
- e3
- Series :
- PowerTrench®
- Drain-source On Resistance-Max :
- 0.029Ohm
- Datasheets
- FDD3580

N-Channel Tape & Reel (TR) 29m Ω @ 7.7A, 10V ±20V 1.76pF @ 40V 49nC @ 10V 80V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD3580 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 245 mJ.The maximum input capacitance of this device is 1.76pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 7.7A.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 80V.The drain-to-source voltage (Vdss) of this transistor needs to be at 80V in order to operate.Using drive voltage (6V 10V), this device helps reduce its power consumption.
FDD3580 Features
the avalanche energy rating (Eas) is 245 mJ
based on its rated peak drain current 50A.
a 80V drain to source voltage (Vdss)
FDD3580 Applications
There are a lot of Rochester Electronics, LLC
FDD3580 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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