FDD306P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Length :

6.73mm

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

52W

Transistor Application :

SWITCHING

Nominal Vgs :

-500 mV

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Voltage - Rated DC :

-12V

Series :

PowerTrench®

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Operating Temperature :

-55°C~175°C TJ

Dual Supply Voltage :

-12V

Resistance :

90mOhm

Threshold Voltage :

-500mV

Input Capacitance (Ciss) (Max) @ Vds :

1290pF @ 6V

Number of Pins :

3

Drain to Source Breakdown Voltage :

-12V

Rds On (Max) @ Id, Vgs :

28m Ω @ 6.7A, 4.5V

Turn On Delay Time :

16 ns

Rise Time :

8ns

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

41 ns

Continuous Drain Current (ID) :

6.7A

Current Rating :

-6.7A

Pulsed Drain Current-Max (IDM) :

54A

Case Connection :

DRAIN

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta

Height :

2.39mm

FET Type :

P-Channel

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Weight :

260.37mg

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Turn-Off Delay Time :

34 ns

Drain to Source Voltage (Vdss) :

12V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

52W Ta

Factory Lead Time :

10 Weeks

Mount :

Surface Mount

Lead Free :

Lead Free

Number of Elements :

1

Published :

2005

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Width :

6.22mm

Vgs (Max) :

±8V

Radiation Hardening :

No

Pbfree Code :

yes

Terminal Form :

Gull wing

Contact Plating :

Tin

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE