FDD3580

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Mfr.Part #
FDD3580
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 80V 7.7A D-PAK
Stock
2,219
In Stock :
2,219

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
50A
JESD-30 Code :
R-PSSO-G2
Packaging :
Tape and Reel (TR)
Drain to Source Voltage (Vdss) :
80V
DS Breakdown Voltage-Min :
80V
Terminal Finish :
MATTE TIN
Terminal Form :
Gull wing
Case Connection :
DRAIN
Surface Mount :
yes
Drain Current-Max (Abs) (ID) :
7.7A
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Qualification Status :
COMMERCIAL
Operating Mode :
ENHANCEMENT MODE
Series :
PowerTrench®
Pbfree Code :
yes
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
245 mJ
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Reach Compliance Code :
Unknown
Current - Continuous Drain (Id) @ 25°C :
7.7A Ta
Drain-source On Resistance-Max :
0.029Ohm
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
29m Ω @ 7.7A, 10V
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
1.76pF @ 40V
Number of Elements :
1
Power Dissipation-Max :
3.8W Ta 42W Tc
RoHS Status :
ROHS3 Compliant
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD3580 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, FDD3580 pinout, FDD3580 datasheet PDF, FDD3580 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD3580 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD3580


N-Channel Tape & Reel (TR) 29m Ω @ 7.7A, 10V ±20V 1.76pF @ 40V 49nC @ 10V 80V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD3580 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 245 mJ.The maximum input capacitance of this device is 1.76pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 7.7A.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 80V.The drain-to-source voltage (Vdss) of this transistor needs to be at 80V in order to operate.Using drive voltage (6V 10V), this device helps reduce its power consumption.

FDD3580 Features


the avalanche energy rating (Eas) is 245 mJ
based on its rated peak drain current 50A.
a 80V drain to source voltage (Vdss)


FDD3580 Applications


There are a lot of Rochester Electronics, LLC
FDD3580 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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