FDD3580
- Mfr.Part #
- FDD3580
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 7.7A D-PAK
- Stock
- 2,219
- In Stock :
- 2,219
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Ta
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Qualification Status :
- COMMERCIAL
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 50A
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 80V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.76pF @ 40V
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 3.8W Ta 42W Tc
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 7.7A
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- Drain-source On Resistance-Max :
- 0.029Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 80V
- Avalanche Energy Rating (Eas) :
- 245 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 7.7A, 10V
- Datasheets
- FDD3580

N-Channel Tape & Reel (TR) 29m Ω @ 7.7A, 10V ±20V 1.76pF @ 40V 49nC @ 10V 80V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD3580 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 245 mJ.The maximum input capacitance of this device is 1.76pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 7.7A.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 80V.The drain-to-source voltage (Vdss) of this transistor needs to be at 80V in order to operate.Using drive voltage (6V 10V), this device helps reduce its power consumption.
FDD3580 Features
the avalanche energy rating (Eas) is 245 mJ
based on its rated peak drain current 50A.
a 80V drain to source voltage (Vdss)
FDD3580 Applications
There are a lot of Rochester Electronics, LLC
FDD3580 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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