FDD3670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3.8W Ta 83W Tc

Resistance :

32mOhm

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Current Rating :

34A

Power Dissipation :

83W

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Weight :

260.37mg

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Case Connection :

DRAIN

Continuous Drain Current (ID) :

34A

Lead Free :

Lead Free

Turn-Off Delay Time :

56 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

6.22mm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

32m Ω @ 7.3A, 10V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Series :

PowerTrench®

Threshold Voltage :

2.5V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2490pF @ 50V

Fall Time (Typ) :

25 ns

Number of Elements :

1

Number of Terminations :

2

Element Configuration :

Single

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

34A Ta

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Height :

2.39mm

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Length :

6.73mm

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

8 Weeks

Turn On Delay Time :

16 ns

Rise Time :

10ns