FDD3670

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Mfr.Part #
FDD3670
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 34A TO252
Stock
16,160
In Stock :
16,160

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Terminal Form :
Gull wing
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Element Configuration :
Single
Fall Time (Typ) :
25 ns
JESD-30 Code :
R-PSSO-G2
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
RoHS Status :
ROHS3 Compliant
Rise Time :
10ns
Current Rating :
34A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Width :
6.22mm
Mounting Type :
Surface Mount
Turn-Off Delay Time :
56 ns
Packaging :
Tape and Reel (TR)
Resistance :
32mOhm
Continuous Drain Current (ID) :
34A
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Power Dissipation :
83W
Number of Terminations :
2
Length :
6.73mm
Drain to Source Breakdown Voltage :
100V
Voltage - Rated DC :
100V
Rds On (Max) @ Id, Vgs :
32m Ω @ 7.3A, 10V
Lead Free :
Lead Free
Weight :
260.37mg
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Series :
PowerTrench®
Turn On Delay Time :
16 ns
Height :
2.39mm
FET Type :
N-Channel
REACH SVHC :
No SVHC
Threshold Voltage :
2.5V
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Terminal Finish :
Tin (Sn)
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
2490pF @ 50V
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Transistor Element Material :
SILICON
Factory Lead Time :
8 Weeks
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
3.8W Ta 83W Tc
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
34A Ta
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Elements :
1
Pbfree Code :
yes
Case Connection :
DRAIN
Datasheets
FDD3670
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD3670 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD3670 pinout, FDD3670 datasheet PDF, FDD3670 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD3670 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD3670


N-Channel Tape & Reel (TR) 32m Ω @ 7.3A, 10V ±20V 2490pF @ 50V 80nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD3670 Description


With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. When compared to other MOSFETs with comparable RDS(ON) parameters, these MOSFETs have faster switching and a lower gate charge. This leads to MOSFETs that are simpler and safer to drive (even at extremely high frequencies), and more efficient DC/DC power supply solutions.



FDD3670 Features


  • Low gate charge (57 nC typical)

  • Fast switching speed

  • High performance trench technology for extremely

  • low RDS(ON)

  • High power and current handling capability



FDD3670 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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