DTA124ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transition Frequency :

250MHz

Qualification Status :

Not Qualified

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.75

Power - Max :

200mW

Number of Elements :

1

Transistor Type :

PNP - Pre-Biased

Collector Emitter Breakdown Voltage :

20V

JESD-30 Code :

R-PDSO-G3

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

VCEsat-Max :

0.3 V

Resistor - Emitter Base (R2) :

22 k Ω

Mount :

Surface Mount

Factory Lead Time :

13 Weeks

Configuration :

SINGLE WITH BUILT-IN RESISTOR

JESD-609 Code :

e1

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Terminal Finish :

TIN SILVER COPPER

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2016

Transistor Element Material :

SILICON

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Voltage (VCEO) :

300mV

Terminal Position :

Dual

Pin Count :

3

Transistor Application :

SWITCHING

Max Breakdown Voltage :

20V

Max Power Dissipation :

200mW

Resistor - Base (R1) :

22 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

250MHz

Max Collector Current :

100mA

ECCN Code :

EAR99

Operating Temperature (Max) :

150°C

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Number of Terminations :

3

Packaging :

Tape and Reel (TR)