DTA113EET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Max Operating Temperature :

150°C

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

200mW

ECCN Code :

EAR99

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Terminal Position :

Dual

Package / Case :

SC-75, SOT-416

Polarity :

PNP

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

PNP - Pre-Biased

Surface Mount :

yes

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Halogen Free :

Halogen Free

Number of Terminations :

3

Resistor - Emitter Base (R2) :

1 k Ω

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Resistor - Base (R1) :

1 k Ω

Terminal Form :

Gull wing

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Number of Pins :

3

Min Operating Temperature :

-55°C

Element Configuration :

Single

Pin Count :

3

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

250mV