DTA113EET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Pin Count :

3

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

250mV

Transistor Type :

PNP - Pre-Biased

Max Operating Temperature :

150°C

Pbfree Code :

yes

Radiation Hardening :

No

Max Collector Current :

100mA

Number of Terminations :

3

Number of Elements :

1

Resistor - Base (R1) :

1 k Ω

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Published :

2013

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

1 k Ω

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Element Configuration :

Single

Current - Collector Cutoff (Max) :

500nA

Terminal Position :

Dual

Terminal Form :

Gull wing

Max Power Dissipation :

200mW

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Polarity :

PNP

Min Operating Temperature :

-55°C

JESD-609 Code :

e3

Halogen Free :

Halogen Free

Package / Case :

SC-75, SOT-416

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free