DTA113EET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2013

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Pin Count :

3

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

250mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Max Collector Current :

100mA

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Terminal Form :

Gull wing

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

200mW

Resistor - Base (R1) :

1 k Ω

Terminal Position :

Dual

Number of Pins :

3

Resistor - Emitter Base (R2) :

1 k Ω

Surface Mount :

yes

Transistor Application :

SWITCHING

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP - Pre-Biased

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Min Operating Temperature :

-55°C

Number of Terminations :

3

Number of Elements :

1

Package / Case :

SC-75, SOT-416

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Polarity :

PNP

Element Configuration :

Single

Halogen Free :

Halogen Free

Max Operating Temperature :

150°C