DTA113EET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Elements :

1

Radiation Hardening :

No

Number of Terminations :

3

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Resistor - Emitter Base (R2) :

1 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Element Configuration :

Single

Pin Count :

3

Halogen Free :

Halogen Free

Collector Emitter Voltage (VCEO) :

250mV

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Polarity :

PNP

ECCN Code :

EAR99

Published :

2013

Terminal Position :

Dual

Number of Pins :

3

Surface Mount :

yes

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Resistor - Base (R1) :

1 k Ω

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Package / Case :

SC-75, SOT-416

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Type :

PNP - Pre-Biased

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Max Power Dissipation :

200mW