DTA113TKAT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Operating Temperature :

150°C

Terminal Position :

Dual

Pbfree Code :

yes

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

Transistor Type :

PNP - Pre-Biased

Terminal Finish :

TIN SILVER COPPER

Power Dissipation :

200mW

Voltage - Rated DC :

-50V

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

-5V

Factory Lead Time :

9 Weeks

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

250MHz

HTS Code :

8541.21.00.75

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BUILT-IN BIAS RESISTOR

Number of Terminations :

3

Pin Count :

3

hFE Min :

100

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Frequency - Transition :

250MHz

JESD-609 Code :

e1

Resistor - Base (R1) :

1 k Ω

Number of Elements :

1

Max Power Dissipation :

200mW

Current Rating :

-100mA

Current - Collector Cutoff (Max) :

500nA ICBO

Element Configuration :

Single

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Collector Current :

-100mA

Collector Emitter Voltage (VCEO) :

300mV

Max Collector Current :

100mA

Base Part Number :

DTA113

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Polarity :

PNP

RoHS Status :

ROHS3 Compliant