DTA113TKAT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Polarity :

PNP

Voltage - Rated DC :

-50V

Number of Elements :

1

hFE Min :

100

JESD-609 Code :

e1

Current - Collector Cutoff (Max) :

500nA ICBO

Number of Terminations :

3

Max Collector Current :

100mA

Transition Frequency :

250MHz

Resistor - Base (R1) :

1 k Ω

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

200mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

-5V

Continuous Collector Current :

-100mA

Transistor Type :

PNP - Pre-Biased

ECCN Code :

EAR99

Factory Lead Time :

9 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Mount :

Surface Mount

Published :

2006

Min Operating Temperature :

-55°C

Pbfree Code :

yes

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

300mV

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Pin Count :

3

Radiation Hardening :

No

Additional Feature :

BUILT-IN BIAS RESISTOR

Base Part Number :

DTA113

Terminal Finish :

TIN SILVER COPPER

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

200mW

Current Rating :

-100mA

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Frequency - Transition :

250MHz