DTA113TKAT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Terminal Position :

Dual

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

300mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-50V

Number of Pins :

3

Additional Feature :

BUILT-IN BIAS RESISTOR

Frequency - Transition :

250MHz

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

-5V

Lead Free :

Lead Free

Resistor - Base (R1) :

1 k Ω

Number of Terminations :

3

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

Mounting Type :

Surface Mount

Element Configuration :

Single

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

10

hFE Min :

100

Max Breakdown Voltage :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

PNP - Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Gull wing

Base Part Number :

DTA113

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

9 Weeks

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Published :

2006

Polarity :

PNP

Power Dissipation :

200mW

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Current Rating :

-100mA

Current - Collector Cutoff (Max) :

500nA ICBO

Pbfree Code :

yes

ECCN Code :

EAR99

Max Power Dissipation :

200mW

Pin Count :

3

Continuous Collector Current :

-100mA

Number of Elements :

1

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Transition Frequency :

250MHz