DMS3019SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

0.015Ohm

Pin Count :

8

Rds On (Max) @ Id, Vgs :

15m Ω @ 9A, 10V

Peak Reflow Temperature (Cel) :

260

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

9A

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Additional Feature :

High Reliability

Published :

2010

Polarity :

NPN

Radiation Hardening :

No

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

30V

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

1.19W

Input Capacitance (Ciss) (Max) @ Vds :

1932pF @ 15V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Nominal Vgs :

2.4 V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

7A 5.7A

Continuous Drain Current (ID) :

7A

Power Dissipation :

1.19W

Number of Channels :

2

JESD-609 Code :

e3

Weight :

73.992255mg