DMS3019SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

1.19W

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1932pF @ 15V

Packaging :

Tape and Reel (TR)

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

2

Number of Elements :

2

Drain-source On Resistance-Max :

0.015Ohm

Continuous Drain Current (ID) :

7A

Power Dissipation :

1.19W

Element Configuration :

Dual

REACH SVHC :

No SVHC

Mount :

Surface Mount

Number of Terminations :

8

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

7A 5.7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Nominal Vgs :

2.4 V

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Published :

2010

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Weight :

73.992255mg

Pin Count :

8

Drain Current-Max (Abs) (ID) :

9A

Rds On (Max) @ Id, Vgs :

15m Ω @ 9A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Polarity :

NPN

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

JESD-609 Code :

e3