DMS3017SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Power Dissipation :

1.79W

Mounting Type :

Surface Mount

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

12m Ω @ 9.5A, 10V

Continuous Drain Current (ID) :

8A

Current - Continuous Drain (Id) @ 25°C :

8A 6A

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

2.5V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Nominal Vgs :

2.5 V

Factory Lead Time :

20 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Weight :

73.992255mg

Drain Current-Max (Abs) (ID) :

10A

FET Type :

2 N-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Published :

2010

Number of Channels :

2

Max Power Dissipation :

1.19W

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Feature :

Logic Level Gate

Number of Elements :

2

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1276pF @ 15V

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Mount :

Surface Mount

Pin Count :

8

Number of Pins :

8

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

30.6nC @ 10V