DMS3016SSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

8.73ns

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

4.69 ns

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Rds On (Max) @ Id, Vgs :

13mOhm @ 9.8A, 10V

Turn-Off Delay Time :

36.41 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package :

8-SO

Power Dissipation-Max :

1.54W Ta

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

9.8A Ta

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Threshold Voltage :

1V

Input Capacitance (Ciss) (Max) @ Vds :

1849pF @ 15V

Rds On Max :

13 mΩ

Input Capacitance :

1.849nF

Mount :

Surface Mount

Number of Pins :

8

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

9.8A

Power Dissipation :

1.54W

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Factory Lead Time :

7 Weeks

Gate to Source Voltage (Vgs) :

12V

FET Feature :

Schottky Diode (Body)

Vgs (Max) :

±12V

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Weight :

73.992255mg

Turn On Delay Time :

6.62 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Resistance :

9mOhm

Mounting Type :

Surface Mount