DMS3014SSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

13m Ω @ 10.4A, 10V

Continuous Drain Current (ID) :

10.4A

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

20 Weeks

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

63A

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Power Dissipation :

1.55W

Weight :

73.992255mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Fall Time (Typ) :

6.6 ns

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

10.4A Ta

Number of Channels :

1

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2296pF @ 15V

Terminal Position :

Dual

Radiation Hardening :

No

Turn-Off Delay Time :

33.1 ns

JESD-609 Code :

e3

Number of Elements :

1

Additional Feature :

High Reliability

ECCN Code :

EAR99

Number of Pins :

8

REACH SVHC :

No SVHC

FET Feature :

Schottky Diode (Body)

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

1.55W Ta

Vgs (Max) :

±12V

Pin Count :

8

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

5.5 ns

Gate Charge (Qg) (Max) @ Vgs :

45.7nC @ 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Rise Time :

24.4ns

Number of Terminations :

8