DMS3015SSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Power Dissipation :

1.55W

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Element Configuration :

Single

Terminal Position :

Dual

Number of Channels :

1

Weight :

73.992255mg

Width :

3.95mm

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

ECCN Code :

EAR99

Power Dissipation-Max :

1.55W Ta

Length :

4.95mm

Gate Charge (Qg) (Max) @ Vgs :

30.6nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Lead Free :

Lead Free

Factory Lead Time :

7 Weeks

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

11A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

13.6 ns

Number of Terminations :

8

Terminal Form :

Gull wing

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Threshold Voltage :

1.5V

Input Capacitance (Ciss) (Max) @ Vds :

1276pF @ 15V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

15.8 ns

FET Feature :

Schottky Diode (Body)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 11A, 10V

Published :

2009

Turn-Off Delay Time :

29.7 ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Rise Time :

27.8ns

Height :

1.5mm

Mount :

Surface Mount

Vgs (Max) :

±12V