DMN6070SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Turn-Off Delay Time :

35 ns

Transistor Application :

SWITCHING

Element Configuration :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

60V

Turn On Delay Time :

3.5 ns

Continuous Drain Current (ID) :

3.3A

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

4.1ns

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

12.3nC @ 10V

Weight :

73.992255mg

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Width :

3.95mm

Rds On (Max) @ Id, Vgs :

80m Ω @ 12A, 10V

Reference Standard :

AEC-Q101

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.5W

Terminal Finish :

Matte Tin (Sn)

Published :

2011

Height :

1.5mm

JESD-609 Code :

e3

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

5.9 mJ

Input Capacitance (Ciss) (Max) @ Vds :

588pF @ 30V

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

11 ns

Length :

4.95mm

Time@Peak Reflow Temperature-Max (s) :

30

Max Power Dissipation :

1.5W

Factory Lead Time :

23 Weeks

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Number of Elements :

2

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Number of Channels :

2

Power - Max :

1.2W