DMN6070SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Additional Feature :

High Reliability

Packaging :

Tape and Reel (TR)

Height :

1.5mm

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

11 ns

Continuous Drain Current (ID) :

3.3A

Length :

4.95mm

Rds On (Max) @ Id, Vgs :

80m Ω @ 12A, 10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Reference Standard :

AEC-Q101

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

1.2W

Published :

2011

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

35 ns

Max Power Dissipation :

1.5W

Avalanche Energy Rating (Eas) :

5.9 mJ

Rise Time :

4.1ns

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

3.5 ns

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation :

1.5W

FET Feature :

Logic Level Gate

Number of Elements :

2

JESD-609 Code :

e3

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

588pF @ 30V

Operating Temperature :

-55°C~150°C TJ

Weight :

73.992255mg

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

23 Weeks

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Radiation Hardening :

No

Width :

3.95mm

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

12.3nC @ 10V