DMN601K-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

14 Weeks

Height :

1mm

Feedback Cap-Max (Crss) :

5 pF

Operating Mode :

ENHANCEMENT MODE

Length :

2.9mm

Number of Pins :

3

Transistor Application :

SWITCHING

Mount :

Surface Mount

Threshold Voltage :

1.6V

JESD-609 Code :

e3

Published :

2005

Voltage - Rated DC :

60V

Additional Feature :

LOW CAPACITANCE

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

REACH SVHC :

No SVHC

Resistance :

2Ohm

Number of Elements :

1

Terminal Form :

Gull wing

Width :

1.3mm

Operating Temperature :

-65°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Power Dissipation-Max :

350mW Ta

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Radiation Hardening :

No

Pin Count :

3

Current Rating :

300mA

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Channels :

1

Weight :

7.994566mg

FET Type :

N-Channel

Continuous Drain Current (ID) :

300mA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power Dissipation :

350mW

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Lead Free :

Lead Free

Element Configuration :

Single

Mounting Type :

Surface Mount

Number of Terminations :

3