DMN6017SK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

2711pF @ 15V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

11A

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.018Ohm

DS Breakdown Voltage-Min :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

18m Ω @ 6A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

50W Tc

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Factory Lead Time :

17 Weeks

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

70A

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Avalanche Energy Rating (Eas) :

32 mJ

Surface Mount :

yes

Reference Standard :

AEC-Q101

Number of Terminations :

2