DMN6013LFG-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

S-PDSO-N5

Number of Elements :

1

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2577pF @ 30V

Number of Terminations :

5

Transistor Element Material :

SILICON

Weight :

72.007789mg

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

45A

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerVDFN

Current - Continuous Drain (Id) @ 25°C :

10.3A Ta 45A Tc

Published :

2014

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

60V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

JESD-609 Code :

e3

Turn On Delay Time :

6.2 ns

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 10V

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Rise Time :

9.9ns

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

11.7 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

23 Weeks

Mounting Type :

Surface Mount

Element Configuration :

Single

Power Dissipation-Max :

1W Ta

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

55.4nC @ 10V

Turn-Off Delay Time :

27.6 ns

Terminal Form :

NO LEAD