DMN601VK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Pin Count :

6

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.305A

Resistance :

2Ohm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

6

Transistor Application :

SWITCHING

Feedback Cap-Max (Crss) :

5 pF

Mounting Type :

Surface Mount

Power Dissipation :

250mW

Voltage - Rated DC :

60V

FET Type :

2 N-Channel (Dual)

Width :

1.2mm

Package / Case :

SOT-563, SOT-666

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Published :

2007

Transistor Element Material :

SILICON

Pbfree Code :

yes

Number of Terminations :

6

Weight :

3.005049mg

Packaging :

Tape and Reel (TR)

Height :

600μm

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Length :

1.6mm

Element Configuration :

Dual

Radiation Hardening :

No

Terminal Form :

Flat

Factory Lead Time :

16 Weeks

FET Feature :

Logic Level Gate

Current Rating :

305mA

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Max Power Dissipation :

250mW

Additional Feature :

LOW CAPACITANCE

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

305mA

Base Part Number :

DMN601VK

REACH SVHC :

No SVHC

Operating Temperature :

-65°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40