DMN601VK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

60V

Height :

600μm

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

60V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

250mW

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Element Configuration :

Dual

Drain Current-Max (Abs) (ID) :

0.305A

Width :

1.2mm

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

LOW CAPACITANCE

Transistor Element Material :

SILICON

Pbfree Code :

yes

Current Rating :

305mA

Mount :

Surface Mount

Length :

1.6mm

Resistance :

2Ohm

Number of Terminations :

6

Feedback Cap-Max (Crss) :

5 pF

Package / Case :

SOT-563, SOT-666

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

DMN601VK

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

FET Type :

2 N-Channel (Dual)

Weight :

3.005049mg

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Number of Pins :

6

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Power Dissipation :

250mW

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

305mA

Terminal Form :

Flat

Mounting Type :

Surface Mount

Pin Count :

6