DMG6968UTS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

562 ns

Rds On (Max) @ Id, Vgs :

23m Ω @ 6.5A, 4.5V

Number of Pins :

8

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual) Common Drain

Continuous Drain Current (ID) :

5.2A

Fall Time (Typ) :

234 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

2

Published :

2012

Turn On Delay Time :

53 ns

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Rise Time :

78ns

Weight :

157.991892mg

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1W

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 4.5V

Vgs(th) (Max) @ Id :

950mV @ 250μA

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

8

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Element Configuration :

Dual

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

143pF @ 10V