DMG6402LDM-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Number of Pins :

6

Power Dissipation :

1.12W

Terminal Finish :

Matte Tin (Sn)

Height :

1.3mm

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Lead Free :

Lead Free

Number of Channels :

1

Turn On Delay Time :

3.41 ns

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.027Ohm

Factory Lead Time :

15 Weeks

Continuous Drain Current (ID) :

5.3A

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

27m Ω @ 7A, 10V

Terminal Position :

Dual

Published :

2012

Transistor Element Material :

SILICON

Mount :

Surface Mount

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Width :

1.7mm

Rise Time :

6.18ns

Length :

3.1mm

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

ECCN Code :

EAR99

Vgs (Max) :

±20V

Pin Count :

6

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 10V

Terminal Form :

Gull wing

Fall Time (Typ) :

2.84 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

404pF @ 15V

Number of Elements :

1

Turn-Off Delay Time :

13.92 ns

Package / Case :

SOT-23-6

Radiation Hardening :

No

Power Dissipation-Max :

1.12W Ta

Drain to Source Voltage (Vdss) :

30V