DMG6301UDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 4.5V

Mounting Type :

Surface Mount

Rise Time :

1.8ns

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Continuous Drain Current (ID) :

240mA

Drain to Source Voltage (Vdss) :

25V

Mount :

Surface Mount

Factory Lead Time :

15 Weeks

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

0.36nC @ 4.5V

Published :

2013

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

2

Package / Case :

6-TSSOP, SC-88, SOT-363

Element Configuration :

Dual

Turn-Off Delay Time :

6.6 ns

Fall Time (Typ) :

2.3 ns

Turn On Delay Time :

2.9 ns

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

FET Feature :

Standard

Base Part Number :

DMG6301

Input Capacitance (Ciss) (Max) @ Vds :

27.9pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Weight :

6.010099mg