DMG6898LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2012

Additional Feature :

ESD PROTECTED, HIGH RELIABILITY

Input Capacitance (Ciss) (Max) @ Vds :

1149pF @ 10V

Transistor Element Material :

SILICON

Rise Time :

12.49ns

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

260

Width :

3.95mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Fall Time (Typ) :

12.33 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain to Source Voltage (Vdss) :

20V

Max Power Dissipation :

1.28W

Drain-source On Resistance-Max :

0.016Ohm

Factory Lead Time :

15 Weeks

Weight :

73.992255mg

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

9.5A

FET Feature :

Logic Level Gate

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Power Dissipation :

1.28W

Radiation Hardening :

No

Base Part Number :

DMG6898LSD

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

30A

Turn On Delay Time :

11.67 ns

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

16m Ω @ 9.4A, 4.5V

Length :

4.95mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.5mm

Lead Free :

Lead Free

Turn-Off Delay Time :

35.89 ns

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V