DMG6602SVTQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Additional Feature :

High Reliability

Number of Elements :

2

Reference Standard :

AEC-Q101

Height :

1mm

Current - Continuous Drain (Id) @ 25°C :

3.4A 2.8A

Drain-source On Resistance-Max :

0.06Ohm

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Channels :

2

Transistor Element Material :

SILICON

Published :

2014

Continuous Drain Current (ID) :

2.8A

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Max Junction Temperature (Tj) :

150°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Feedback Cap-Max (Crss) :

80 pF

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Factory Lead Time :

15 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

FET Type :

N and P-Channel

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

840mW

Max Power Dissipation :

840mW

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.1A, 10V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 15V

Mount :

Surface Mount

FET Feature :

Standard