DMG4932LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Transistor Application :

SWITCHING

Pin Count :

8

Rds On (Max) @ Id, Vgs :

15m Ω @ 9A, 10V

Weight :

73.992255mg

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual)

Number of Channels :

1

Power Dissipation :

1.19W

Factory Lead Time :

7 Weeks

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

40A

FET Feature :

Logic Level Gate

Radiation Hardening :

No

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

9.5A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Additional Feature :

High Reliability

Drain to Source Voltage (Vdss) :

30V

Base Part Number :

DMG4932LSD

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Published :

2010

Transistor Element Material :

SILICON

Max Power Dissipation :

1.19W

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

1932pF @ 15V

Number of Pins :

8