DMG4932LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.19W

Additional Feature :

High Reliability

Radiation Hardening :

No

Transistor Application :

SWITCHING

Factory Lead Time :

7 Weeks

Pin Count :

8

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

1932pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

40A

Number of Pins :

8

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2.4V @ 250μA

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

15m Ω @ 9A, 10V

FET Type :

2 N-Channel (Dual)

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Base Part Number :

DMG4932LSD

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Weight :

73.992255mg

Pbfree Code :

yes

Number of Channels :

1

ECCN Code :

EAR99

Number of Terminations :

8

Power Dissipation :

1.19W

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

9.5A

Terminal Form :

Gull wing

Number of Elements :

2

RoHS Status :

ROHS3 Compliant