DMG4496SSSQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

60 A

DS Breakdown Voltage-Min :

30 V

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

10 A

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

1.42 W

Number of Elements :

1

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Number of Terminals :

8

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Reference Standard :

AEC-Q101

Pbfree Code :

yes

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

High Reliability

JESD-30 Code :

R-PDSO-G8

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0215 Ω