DMG4496SSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

4.76 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Weight :

73.992255mg

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Packaging :

Digi-Reel®

Pin Count :

8

Number of Pins :

8

Mounting Type :

Surface Mount

Height :

1.5mm

Gate Charge (Qg) (Max) @ Vgs :

10.2nC @ 10V

Power Dissipation :

1.42W

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Pbfree Code :

yes

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

21.5m Ω @ 10A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

3.64ns

Turn-Off Delay Time :

19.5 ns

Published :

2013

Pulsed Drain Current-Max (IDM) :

60A

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

JESD-609 Code :

e3

Width :

3.95mm

Length :

4.95mm

Number of Terminations :

8

Vgs (Max) :

±25V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

493.5pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

FET Type :

N-Channel

Fall Time (Typ) :

4.9 ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

10A

Power Dissipation-Max :

1.42W Ta