DMG4406LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Power Dissipation :

2W

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

FET Type :

N-Channel

Turn On Delay Time :

5.2 ns

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

11m Ω @ 12A, 10V

Current - Continuous Drain (Id) @ 25°C :

10.3A Ta

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Channels :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Pin Count :

8

Radiation Hardening :

No

Published :

2011

Continuous Drain Current (ID) :

10.3A

Turn-Off Delay Time :

22.3 ns

Number of Terminations :

8

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

26.7nC @ 10V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.5W Ta

Height :

1.5mm

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Mount :

Surface Mount

Lead Free :

Lead Free

Pbfree Code :

yes

Terminal Form :

Gull wing

Width :

3.95mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

9.3A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

90A

Rise Time :

21.2ns

Additional Feature :

High Reliability

Fall Time (Typ) :

5.1 ns

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1281pF @ 15V

Weight :

73.992255mg

Length :

4.95mm