DMG4800LK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

798pF @ 10V

Additional Feature :

High Reliability

Power Dissipation-Max :

1.71W Ta

Lead Free :

Lead Free

ECCN Code :

EAR99

Weight :

3.949996g

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 5V

Factory Lead Time :

15 Weeks

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

26.33 ns

Vgs (Max) :

±25V

Pulsed Drain Current-Max (IDM) :

48A

Terminal Position :

Single

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

17m Ω @ 9A, 10V

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

2

FET Type :

N-Channel

Pbfree Code :

No

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Fall Time (Typ) :

8.55 ns

REACH SVHC :

No SVHC

Rise Time :

4.5ns

Power Dissipation :

1.71W

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.6V @ 250μA

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Packaging :

Digi-Reel®

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Pin Count :

4

Continuous Drain Current (ID) :

10A

Terminal Form :

Gull wing

Published :

2012

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5.03 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)