DMG4468LFG

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

6 Weeks

Turn-Off Delay Time :

18.84 ns

Packaging :

Tape and Reel (TR)

Rise Time :

14.53ns

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

15m Ω @ 11.6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-N5

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Pin Count :

8

Number of Pins :

8

DS Breakdown Voltage-Min :

30V

Radiation Hardening :

No

Continuous Drain Current (ID) :

7.62A

Terminal Position :

Dual

Power Dissipation-Max :

990mW Ta

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Number of Channels :

1

Number of Elements :

1

JESD-609 Code :

e4

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

5

Fall Time (Typ) :

6.01 ns

Turn On Delay Time :

5.46 ns

Published :

2009

Transistor Application :

SWITCHING

Package / Case :

8-PowerUDFN

Gate Charge (Qg) (Max) @ Vgs :

18.85nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

7.62A Ta

Input Capacitance (Ciss) (Max) @ Vds :

867pF @ 10V

ECCN Code :

EAR99