DMG4822SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Length :

4.95mm

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

25V

Turn-Off Delay Time :

14.6 ns

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2013

Number of Elements :

2

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

20m Ω @ 8.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

478.9pF @ 16V

Base Part Number :

DMG4822

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Radiation Hardening :

No

Height :

1.5mm

Mounting Type :

Surface Mount

Fall Time (Typ) :

3.1 ns

Additional Feature :

High Reliability

JESD-609 Code :

e3

Continuous Drain Current (ID) :

10A

FET Type :

2 N-Channel (Dual)

Number of Terminations :

8

Rise Time :

7.9ns

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Factory Lead Time :

15 Weeks

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

30V

Weight :

73.992255mg

Power Dissipation :

1.42W

Max Power Dissipation :

1.42W

Lead Free :

Lead Free

Width :

3.95mm

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

2.9 ns