D45H2A
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- Mfr.Part #
- D45H2A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 8A TO220-3
- Stock
- 382
- In Stock ：
- 382
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 25MHz
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Breakdown Voltage :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 8A 5V
- Lifecycle Status :
- CONSULT SALES OFFICE (Last Updated: 1 week ago)
- Weight :
- 1.8g
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Max Power Dissipation :
- 60W
- Length :
- 9.9mm
- Voltage - Rated DC :
- -30V
- Transistor Application :
- SWITCHING
- hFE Min :
- 100
- Mount :
- Through Hole
- Frequency :
- 25MHz
- Max Collector Current :
- 8A
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Published :
- 2002
- Collector Emitter Saturation Voltage :
- 1V
- Transition Frequency :
- 25MHz
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Current Rating :
- -8A
- Height :
- 9.2mm
- Radiation Hardening :
- No
- Power Dissipation :
- 60W
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Emitter Base Voltage (VEBO) :
- 1.5V
- Base Part Number :
- D45H
- Factory Lead Time :
- 17 Weeks
- Width :
- 4.5mm
- Datasheets
- D45H2A
PNP -55°C~150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
D45H2A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 8A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 1.5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 8A volts.
D45H2A Features
the DC current gain for this device is 100 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 1.5V
the current rating of this device is -8A
a transition frequency of 25MHz
D45H2A Applications
There are a lot of ON Semiconductor
D45H2A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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