D45H11FP
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- Mfr.Part #
- D45H11FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 8,896
- In Stock ：
- 8,896
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 40
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Element Configuration :
- Single
- Package / Case :
- TO-220-3 Full Pack
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Max Power Dissipation :
- 36W
- Case Connection :
- Isolated
- Collector Emitter Saturation Voltage :
- -1V
- Power Dissipation :
- 36W
- JEDEC-95 Code :
- TO-220AB
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Base Part Number :
- D45H11
- Max Collector Current :
- 10A
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Datasheets
- D45H11FP
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
D45H11FP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.
D45H11FP Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
D45H11FP Applications
There are a lot of STMicroelectronics
D45H11FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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