D45H11FP

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Mfr.Part #
D45H11FP
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS PNP 80V 10A TO220FP
Stock
8,896
In Stock :
8,896

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
40
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
10μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Element Configuration :
Single
Package / Case :
TO-220-3 Full Pack
Polarity/Channel Type :
PNP
Emitter Base Voltage (VEBO) :
5V
Pin Count :
3
Max Power Dissipation :
36W
Case Connection :
Isolated
Collector Emitter Saturation Voltage :
-1V
Power Dissipation :
36W
JEDEC-95 Code :
TO-220AB
Transistor Type :
PNP
Collector Emitter Breakdown Voltage :
80V
Mounting Type :
Through Hole
Mount :
Through Hole
Packaging :
Tube
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Base Part Number :
D45H11
Max Collector Current :
10A
Collector Emitter Voltage (VCEO) :
80V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Transistor Application :
SWITCHING
Factory Lead Time :
8 Weeks
Operating Temperature :
150°C TJ
Contact Plating :
Tin
JESD-30 Code :
R-PSFM-T3
Number of Terminations :
3
Datasheets
D45H11FP
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics D45H11FP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Base Part Number:D45H11, Operating Temperature:150°C TJ, Number of Terminations:3, D45H11FP pinout, D45H11FP datasheet PDF, D45H11FP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics D45H11FP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics D45H11FP


PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole

D45H11FP Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.

D45H11FP Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V


D45H11FP Applications


There are a lot of STMicroelectronics
D45H11FP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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