D45H11FP

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Mfr.Part #
D45H11FP
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS PNP 80V 10A TO220FP
Stock
8,896
In Stock :
8,896

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
10μA
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
80V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Case Connection :
Isolated
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Transistor Application :
SWITCHING
Operating Temperature :
150°C TJ
Number of Elements :
1
Transistor Element Material :
SILICON
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Collector Emitter Breakdown Voltage :
80V
Element Configuration :
Single
JESD-609 Code :
e3
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Max Collector Current :
10A
Transistor Type :
PNP
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Factory Lead Time :
8 Weeks
Collector Emitter Saturation Voltage :
-1V
Base Part Number :
D45H11
Power Dissipation :
36W
Package / Case :
TO-220-3 Full Pack
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
PNP
hFE Min :
40
Max Power Dissipation :
36W
JEDEC-95 Code :
TO-220AB
Pin Count :
3
ECCN Code :
EAR99
Datasheets
D45H11FP
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics D45H11FP from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:D45H11, Package / Case:TO-220-3 Full Pack, D45H11FP pinout, D45H11FP datasheet PDF, D45H11FP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics D45H11FP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics D45H11FP


PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole

D45H11FP Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.

D45H11FP Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V


D45H11FP Applications


There are a lot of STMicroelectronics
D45H11FP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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