D45H11FP
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- Mfr.Part #
- D45H11FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 8,896
- In Stock ：
- 8,896
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3 Full Pack
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- JEDEC-95 Code :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- Base Part Number :
- D45H11
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- -1V
- JESD-609 Code :
- e3
- Max Collector Current :
- 10A
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- hFE Min :
- 40
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Power Dissipation :
- 36W
- Max Power Dissipation :
- 36W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- Datasheets
- D45H11FP
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
D45H11FP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.
D45H11FP Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
D45H11FP Applications
There are a lot of STMicroelectronics
D45H11FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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