D45H11

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Mfr.Part #
D45H11
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 80V 10A TO220
Stock
42,329
In Stock :
42,329

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Current Rating :
-10A
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Time@Peak Reflow Temperature-Max (s) :
40
Peak Reflow Temperature (Cel) :
260
Surface Mount :
No
Weight :
4.535924g
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
10μA
Radiation Hardening :
No
Height :
9.28mm
Transistor Type :
PNP
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
80V
Mounting Type :
Through Hole
Frequency :
40MHz
Packaging :
Tube
Polarity/Channel Type :
PNP
REACH SVHC :
No SVHC
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Max Power Dissipation :
2W
Number of Pins :
3
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
80V
hFE Min :
60
Contact Plating :
Tin
Gain Bandwidth Product :
40MHz
Published :
2005
Length :
10.28mm
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Factory Lead Time :
8 Weeks
JEDEC-95 Code :
TO-220AB
Package / Case :
TO-220-3
Number of Elements :
1
Transition Frequency :
40MHz
Base Part Number :
D45H
Max Collector Current :
10A
Collector Emitter Voltage (VCEO) :
80V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Pbfree Code :
yes
Width :
4.82mm
Operating Temperature :
-55°C~150°C TJ
Case Connection :
COLLECTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
-80V
Transistor Element Material :
SILICON
Power Dissipation :
2W
Collector Emitter Saturation Voltage :
1V
Number of Terminations :
3
Datasheets
D45H11
Introducing Transistors - Bipolar (BJT) - Single onsemi D45H11 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Base Part Number:D45H, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, D45H11 pinout, D45H11 datasheet PDF, D45H11 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D45H11 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D45H11


PNP -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

D45H11G Overview


This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -10A.In this part, there is a transition frequency of 40MHz.The maximum collector current is 10A volts.

D45H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz


D45H11G Applications


There are a lot of ON Semiconductor
D45H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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