D45H8
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- Mfr.Part #
- D45H8
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220
- Stock
- 13,215
- In Stock ：
- 13,215
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 50W
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- VCEsat-Max :
- 1 V
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Max Power Dissipation :
- 50W
- Current Rating :
- 8A
- JESD-609 Code :
- e3
- Base Part Number :
- D45H8
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10μA
- Case Connection :
- COLLECTOR
- Length :
- 10.4mm
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Packaging :
- Tube
- Number of Pins :
- 3
- Number of Elements :
- 1
- Weight :
- 4.535924g
- Pin Count :
- 3
- Transition Frequency :
- 40MHz
- Height :
- 9.15mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- hFE Min :
- 60
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- -60V
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 10A
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- 1V
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Radiation Hardening :
- No
- Width :
- 4.6mm
- Polarity/Channel Type :
- PNP
- Datasheets
- D45H8
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
D45H8 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 40MHz.A maximum collector current of 10A volts can be achieved.
D45H8 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 40MHz
D45H8 Applications
There are a lot of STMicroelectronics
D45H8 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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