D45H11
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- Mfr.Part #
- D45H11
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220
- Stock
- 2,632
- In Stock ：
- 2,632
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Transition Frequency :
- 40MHz
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 80V
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 10A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Width :
- 4.82mm
- Frequency :
- 40MHz
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 80V
- Length :
- 10.28mm
- Gain Bandwidth Product :
- 40MHz
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1V
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Current Rating :
- -10A
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2005
- Current - Collector Cutoff (Max) :
- 10μA
- Max Power Dissipation :
- 2W
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -80V
- hFE Min :
- 60
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Packaging :
- Tube
- Height :
- 9.28mm
- Weight :
- 4.535924g
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- D45H
- Datasheets
- D45H11
PNP -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
D45H11G Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -10A.In this part, there is a transition frequency of 40MHz.The maximum collector current is 10A volts.
D45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz
D45H11G Applications
There are a lot of ON Semiconductor
D45H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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