D45H11G

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Mfr.Part #
D45H11G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 80V 10A TO220
Stock
15,874
In Stock :
15,874

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Pbfree Code :
yes
Transition Frequency :
40MHz
hFE Min :
60
Operating Temperature :
-55°C~150°C TJ
Frequency :
40MHz
Current Rating :
-10A
Case Connection :
COLLECTOR
JEDEC-95 Code :
TO-220AB
Element Configuration :
Single
Package / Case :
TO-220-3
Mounting Type :
Through Hole
ECCN Code :
EAR99
Max Power Dissipation :
2W
Power Dissipation :
2W
Transistor Application :
SWITCHING
Length :
10.28mm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Collector Emitter Breakdown Voltage :
80V
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
-80V
Collector Base Voltage (VCBO) :
80V
Collector Emitter Voltage (VCEO) :
80V
Lead Free :
Lead Free
JESD-609 Code :
e3
Published :
2005
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Width :
4.82mm
REACH SVHC :
No SVHC
Surface Mount :
No
Transistor Type :
PNP
Pin Count :
3
Base Part Number :
D45H
Radiation Hardening :
No
Number of Pins :
3
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Contact Plating :
Tin
Emitter Base Voltage (VEBO) :
5V
Gain Bandwidth Product :
40MHz
Current - Collector Cutoff (Max) :
10μA
Peak Reflow Temperature (Cel) :
260
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
8 Weeks
Number of Terminations :
3
Max Collector Current :
10A
Polarity/Channel Type :
PNP
Collector Emitter Saturation Voltage :
1V
Weight :
4.535924g
Number of Elements :
1
Height :
9.28mm
Datasheets
D45H11G
Introducing Transistors - Bipolar (BJT) - Single onsemi D45H11G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Base Part Number:D45H, Number of Pins:3, Number of Terminations:3, D45H11G pinout, D45H11G datasheet PDF, D45H11G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D45H11G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D45H11G


PNP -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

D45H11G Overview


This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -10A.In this part, there is a transition frequency of 40MHz.The maximum collector current is 10A volts.

D45H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz


D45H11G Applications


There are a lot of ON Semiconductor
D45H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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