D45H11G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Width :

4.82mm

Transistor Application :

SWITCHING

Weight :

4.535924g

Gain Bandwidth Product :

40MHz

Power Dissipation :

2W

Collector Emitter Saturation Voltage :

1V

Published :

2005

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Transition Frequency :

40MHz

hFE Min :

60

Contact Plating :

Tin

Frequency :

40MHz

Max Collector Current :

10A

Current - Collector Cutoff (Max) :

10μA

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

1

Mounting Type :

Through Hole

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Collector Emitter Breakdown Voltage :

80V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

JESD-609 Code :

e3

Polarity/Channel Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Height :

9.28mm

Packaging :

Tube

Length :

10.28mm

Element Configuration :

Single

Transistor Type :

PNP

Lead Free :

Lead Free

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Collector Emitter Voltage (VCEO) :

80V

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Max Power Dissipation :

2W

Collector Base Voltage (VCBO) :

80V

Base Part Number :

D45H

Radiation Hardening :

No

Current Rating :

-10A

ECCN Code :

EAR99

Surface Mount :

No

Voltage - Rated DC :

-80V