D45H8G

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Mfr.Part #
D45H8G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 60V 10A TO220
Stock
28
In Stock :
28

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2004
Pbfree Code :
yes
Power Dissipation :
2W
Polarity/Channel Type :
PNP
Package / Case :
TO-220-3
Length :
10.28mm
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
60
Current - Collector Cutoff (Max) :
10μA
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
260
Number of Pins :
3
Transition Frequency :
40MHz
Transistor Type :
PNP
Packaging :
Tube
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
60V
Transistor Application :
SWITCHING
JESD-609 Code :
e3
JEDEC-95 Code :
TO-220AB
Weight :
4.535924g
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Saturation Voltage :
1V
Base Part Number :
D45H
Collector Emitter Breakdown Voltage :
60V
Surface Mount :
No
Case Connection :
COLLECTOR
Radiation Hardening :
No
Height :
9.28mm
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Number of Terminations :
3
Contact Plating :
Tin
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Voltage - Rated DC :
-60V
Current Rating :
-10A
Gain Bandwidth Product :
40MHz
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Max Collector Current :
10A
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
60V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time :
8 Weeks
Pin Count :
3
Frequency :
40MHz
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Max Power Dissipation :
2W
Number of Elements :
1
Width :
4.82mm
Datasheets
D45H8G
Introducing Transistors - Bipolar (BJT) - Single onsemi D45H8G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Base Part Number:D45H, Number of Terminations:3, D45H8G pinout, D45H8G datasheet PDF, D45H8G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D45H8G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D45H8G


PNP -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

D45H8G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 10A volts.

D45H8G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz


D45H8G Applications


There are a lot of ON Semiconductor
D45H8G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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