D45H8G

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Mfr.Part #
D45H8G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 60V 10A TO220
Stock
28
In Stock :
28

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Weight :
4.535924g
Collector Base Voltage (VCBO) :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Polarity/Channel Type :
PNP
Gain Bandwidth Product :
40MHz
Number of Pins :
3
Package / Case :
TO-220-3
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Transition Frequency :
40MHz
Length :
10.28mm
Surface Mount :
No
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
hFE Min :
60
Transistor Type :
PNP
Height :
9.28mm
Peak Reflow Temperature (Cel) :
260
Contact Plating :
Tin
Case Connection :
COLLECTOR
ECCN Code :
EAR99
JESD-609 Code :
e3
Current Rating :
-10A
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Max Collector Current :
10A
Number of Elements :
1
Transistor Element Material :
SILICON
Voltage - Rated DC :
-60V
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Voltage (VCEO) :
60V
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Mounting Type :
Through Hole
Width :
4.82mm
Radiation Hardening :
No
Base Part Number :
D45H
JEDEC-95 Code :
TO-220AB
Pbfree Code :
yes
Factory Lead Time :
8 Weeks
Published :
2004
Current - Collector Cutoff (Max) :
10μA
Collector Emitter Breakdown Voltage :
60V
Emitter Base Voltage (VEBO) :
5V
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Collector Emitter Saturation Voltage :
1V
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Element Configuration :
Single
Max Power Dissipation :
2W
Power Dissipation :
2W
Frequency :
40MHz
Datasheets
D45H8G
Introducing Transistors - Bipolar (BJT) - Single onsemi D45H8G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Base Part Number:D45H, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, D45H8G pinout, D45H8G datasheet PDF, D45H8G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D45H8G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D45H8G


PNP -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

D45H8G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 10A volts.

D45H8G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz


D45H8G Applications


There are a lot of ON Semiconductor
D45H8G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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