D45H8G
- Mfr.Part #
- D45H8G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220
- Stock
- 28
- In Stock :
- 28
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2004
- Pbfree Code :
- yes
- Power Dissipation :
- 2W
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-220-3
- Length :
- 10.28mm
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 60
- Current - Collector Cutoff (Max) :
- 10μA
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Transition Frequency :
- 40MHz
- Transistor Type :
- PNP
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 1V
- Base Part Number :
- D45H
- Collector Emitter Breakdown Voltage :
- 60V
- Surface Mount :
- No
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Height :
- 9.28mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Voltage - Rated DC :
- -60V
- Current Rating :
- -10A
- Gain Bandwidth Product :
- 40MHz
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Max Collector Current :
- 10A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 3
- Frequency :
- 40MHz
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Max Power Dissipation :
- 2W
- Number of Elements :
- 1
- Width :
- 4.82mm
- Datasheets
- D45H8G

PNP -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
D45H8G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 10A volts.
D45H8G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz
D45H8G Applications
There are a lot of ON Semiconductor
D45H8G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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