CSD87503Q3E

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power - Max :

15.6W

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Series :

NexFET™

Current - Continuous Drain (Id) @ 25°C :

10A Ta

JESD-609 Code :

e4

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual) Common Source

Number of Terminations :

6

Factory Lead Time :

6 Weeks

Number of Elements :

2

FET Feature :

Standard

Surface Mount :

yes

Case Connection :

DRAIN

Configuration :

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 6A, 10V

Gate Charge (Qg) (Max) @ Vgs :

17.4nC @ 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Thickness :

1mm

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Transistor Element Material :

SILICON

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Package / Case :

8-PowerVDFN

Feedback Cap-Max (Crss) :

194 pF

Drain Current-Max (Abs) (ID) :

10A

Base Part Number :

CSD87503

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 15V

Width :

3.3mm

Length :

3.3mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)